Xianzhou Shao

机构：Institute of Microelectronics, Institute of Microelectronics · ORCID：0000-0003-3033-0396

发表论文 16 篇 · 总被引 89 次 · h-index 5

代表论文

• Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ V th Measurement (2023 · IEEE Transactions on Electron Devices · 被引 28)
• Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf 0.5 Zr 0.5 O 2 (2024 · IEEE Transactions on Electron Devices · 被引 18)
• Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer (2024 · IEEE Transactions on Electron Devices · 被引 15)
• Effect of Nitridation of Bottom Interlayer in FeFETs With the TiN/Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 /Bottom Interlayer/Si Substrate Structure (2024 · IEEE Transactions on Electron Devices · 被引 7)
• Switching Dynamics of HfO 2 –ZrO 2 Nanolaminates With Different Laminate Thicknesses (2024 · IEEE Transactions on Electron Devices · 被引 6)
• Investigating the Charge Trapping Behavior and Enhancing the Memory Window of Silicon Channel Hf 0.5 Zr 0.5 O 2 FeFET With SiO 2 /HfO 2 /SiO 2 Gate Side Interlayer (2025 · IEEE Transactions on Electron Devices · 被引 3)