J. Kolodzey

机构：University of Delaware · ORCID：0000-0001-7250-2614

发表论文 256 篇 · 总被引 3188 次 · h-index 28

代表论文

Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy (2018 · Applied Physics Letters · 被引 32)
Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11% (2016 · Journal of Applied Physics · 被引 28)
Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing (2022 · Journal of Alloys and Compounds · 被引 25)
Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE (2017 · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 被引 25)
Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition (2016 · Journal of Crystal Growth · 被引 24)
MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties (2016 · Journal of Alloys and Compounds · 被引 24)