Daisuke Saida

机构：National Institute of Advanced Industrial Science and Technology · ORCID：0000-0001-6831-0089

发表论文 27 篇 · 总被引 201 次 · h-index 9

代表论文

• Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques (2014 · 被引 28)
• Magnetization switching by current and microwaves (2016 · Physical review. B./Physical review. B · 被引 26)
• $1\times$ - to $2\times$ -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below $100~\mu$ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS (2016 · IEEE Transactions on Electron Devices · 被引 21)
• Precise Damage Observation in Ion-Beam Etched MTJ (2016 · IEEE Transactions on Magnetics · 被引 18)
• Current-Induced Magnetic Field Detection by Magnetic Force Microscopy around a GaAs/AlGaAs Mesa Stripe (2003 · Japanese Journal of Applied Physics · 被引 16)
• Sub-3 ns pulse with sub-100 µA switching of 1x–2x nm perpendicular MTJ for high-performance embedded STT-MRAM towards sub-20 nm CMOS (2016 · 被引 14)