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Hailiang Dong

机构:Harbin University of Science and Technology, China University of Geosciences · ORCID:0000-0001-9160-1263

发表论文 46 篇 · 总被引 513 次 · h-index 15

代表论文

  • Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite (2018 · Nanoscale Research Letters · 被引 27)
  • Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier (2020 · Optics & Laser Technology · 被引 26)
  • Effect of Indium doping on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes (2018 · Superlattices and Microstructures · 被引 23)
  • Structure and photoluminescence property of Eu, Tb, Zn-containing macromolecular complex for white light emission (2018 · Optics & Laser Technology · 被引 11)
  • Atomic-Scale Insights into the Interfacial Polarization Effect in the InGaN/GaN Heterostructure for Solar Cells (2022 · ACS Applied Materials & Interfaces · 被引 10)
  • Evolution mechanism of InGaN quantum dots and their optical properties (2019 · Optical Materials · 被引 10)