Hang Xu

机构：Fudan University, Shanghai Fudan Microelectronics (China), State Key Laboratory of ASIC and System · ORCID：0000-0002-6784-5863

发表论文 82 篇 · 总被引 759 次 · h-index 12

代表论文

• Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing (2025 · Moore and More · 被引 6)
• Robustness Analysis of 1200-V IGBT Under Extremely High-Gate Voltage Stress (2025 · IEEE Transactions on Electron Devices · 被引 5)
• Degradation Behaviors Comparation and Analysis of Two Typical Trench SiC MOSFETs Under High Gate Voltage Stress (2025 · IEEE Transactions on Device and Materials Reliability · 被引 3)
• Detailed Degradation Analysis of N-FinFET Under Mixed AC Stress (2025 · IEEE Transactions on Electron Devices · 被引 3)
• A process compatible SiC trench MOSFET integrated with double p+-polySi/SiC HJD for enhanced switching performance (2025 · Microelectronics Journal · 被引 2)
• Hysteresis curve model of precision reducers in robots and its application in lost motion evaluation (2025 · Measurement Sensors · 被引 2)