Fuxing Dai

机构：Shanghai Institute of Technical Physics · ORCID：0000-0001-7413-1095

发表论文 15 篇 · 总被引 287 次 · h-index 6

代表论文

• Next‐Generation Photodetectors beyond Van Der Waals Junctions (2023 · Advanced Materials · 被引 102)
• Dark Current Mechanisms and Suppression Strategies for Infrared Photodetectors Based on Two‐Dimensional Materials (2023 · Laser & Photonics Review · 被引 68)
• Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization (2025 · Nature Communications · 被引 31)
• Anomalous Non-Equilibrium State Response of Long-Wavelength HgCdTe Infrared Detectors (2023 · IEEE Electron Device Letters · 被引 29)
• Gate‐Tunable van der Waals Photodiodes with an Ultrahigh Peak‐to‐Valley Current Ratio (2023 · Small · 被引 26)
• Bioinspired γ‐InSe Opto‐sensor Exhibiting Enhanced Visual Adaptation Mediated by Polarization Sensitivity (2025 · Advanced Functional Materials · 被引 12)