Fengbin Tian

机构：Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microelectronics · ORCID：0000-0002-0271-9815

发表论文 22 篇 · 总被引 275 次 · h-index 9

代表论文

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x O2/Interlayer/Si (MFIS) Gate Structure (2021 · IEEE Transactions on Electron Devices · 被引 61)
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure (2022 · IEEE Transactions on Electron Devices · 被引 58)
Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement (2023 · IEEE Transactions on Electron Devices · 被引 28)
Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue (2022 · IEEE Transactions on Electron Devices · 被引 26)
Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current (2023 · IEEE Transactions on Electron Devices · 被引 16)
Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf0.5Zr0.5O2/SiO x Interface to Suppress Oxygen Vacancy Generation (2022 · IEEE Transactions on Electron Devices · 被引 16)