Ling Yang

机构：Xidian University, Syracuse University · ORCID：0000-0001-7284-8180

发表论文 201 篇 · 总被引 2840 次 · h-index 27

代表论文

• 3 kV fully vertical β -Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN (2025 · Applied Physics Letters · 被引 18)
• 15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer (2024 · IEEE Electron Device Letters · 被引 13)
• Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design (2024 · Applied Physics Letters · 被引 11)
• High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer (2025 · IEEE Electron Device Letters · 被引 10)
• Oxygen plasma and post-annealing assisted surface oxidation for high- V th E-mode p -GaN HEMTs (2025 · Applied Physics Letters · 被引 6)
• Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT (2025 · Science China Information Sciences · 被引 6)