Teng Yang

机构：Chinese Academy of Sciences, Institute of Metal Research, International Centre for Materials Physics, Shenyang Academy of Environmental Sciences (China) · ORCID：0000-0003-3773-7586

发表论文 192 篇 · 总被引 5370 次 · h-index 38

代表论文

• 2D ferroelectric narrow-bandgap semiconductor Wurtzite’ type α-In2Se3 and its silicon-compatible growth (2025 · Nature Communications · 被引 26)
• Interface Element Accumulation‐Induced Single Ferroelectric Domain for High‐Performance Neuromorphic Synapse (2025 · Advanced Functional Materials · 被引 16)
• Large-area non-stoichiometric phase transition in transition metal chalcogenide films (2026 · Nature Materials · 被引 10)
• BN-Doped Polycyclic Aromatic Hydrocarbons and Their Applications in Optoelectronics (2025 · Molecules · 被引 9)
• Construction of Boron-Promoted Ti Active Centers in Titanosilicates for Selective Oxidation Reactions (2025 · Journal of the American Chemical Society · 被引 8)
• Spontaneous Topological Hall Effect in Intercalated Co 1/3 TaS 2 Nanoflakes with Non‐Coplanar Antiferromagnetic Order (2025 · Advanced Functional Materials · 被引 8)