Zhaomeng Gao

机构：Advanced Materials and Devices (United States), East China Normal University · ORCID：0000-0002-8833-9660

发表论文 36 篇 · 总被引 868 次 · h-index 13

代表论文

• Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film (2022 · Nature Communications · 被引 223)
• Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film (2021 · IEEE Electron Device Letters · 被引 50)
• Improved Endurance of Hf₀.₅Zr₀.₅O 2 -Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode (2022 · IEEE Electron Device Letters · 被引 39)
• Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility (2021 · Nano Research · 被引 39)
• Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization (2023 · Device · 被引 34)
• Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf 0.5 Zr 0.5 O 2 films: vacancy generation and lattice dislocation (2021 · 被引 30)