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Muhammad A. Alam

机构:Purdue University West Lafayette · ORCID:0000-0001-8775-6043

发表论文 616 篇 · 总被引 27566 次 · h-index 71

代表论文

  • Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs (2025 · IEEE Transactions on Electron Devices · 被引 15)
  • Analyzing the Contact-Doping Effect in In₂O₃ FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors (2025 · IEEE Transactions on Electron Devices · 被引 14)
  • Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization (2025 · ACS Omega · 被引 8)
  • InGaZnO 4 and In 2 O 3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline States (2025 · ACS Materials Letters · 被引 7)
  • Universality of Subthreshold Slope and Defect Characterization in Thin Body Transistors (2025 · IEEE Electron Device Letters · 被引 6)
  • Part fingerprinting-based productivity monitoring of CNC machines with low-cost current sensors (2025 · The International Journal of Advanced Manufacturing Technology · 被引 4)