Kenji Ohmori

机构：Integrated Device Technology (United States), Advanced Device Technology (United States), Device Lab Inc. (Japan) · ORCID：0000-0002-5312-319X

发表论文 361 篇 · 总被引 3382 次 · h-index 29

代表论文

• True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM (2016 · 被引 79)
• Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes (2016 · Scientific Reports · 被引 36)
• Effect of a SiO2 layer on the thermal transport properties of 〈100〉Si nanowires: A molecular dynamics study (2015 · Physical Review B · 被引 36)
• A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability (2014 · Microelectronics Reliability · 被引 29)
• Direct White Noise Characterization of Short-Channel MOSFETs (2021 · IEEE Transactions on Electron Devices · 被引 26)
• Similar phenotypes of Girdin germ-line and conditional knockout mice indicate a crucial role for Girdin in the nestin lineage (2012 · Biochemical and Biophysical Research Communications · 被引 23)