Zhanwei Shen
机构:Information Technology Institute, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, University of Chinese Academy of Sciences · ORCID:0000-0002-4693-2503
发表论文 43 篇 · 总被引 332 次 · h-index 12
代表论文
- Characterization of epitaxial layers grown on 4H-SiC (0 0 0 −1) substrates (2022 · Journal of Crystal Growth · 被引 22)
- Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS) (2023 · Journal of Crystal Growth · 被引 18)
- PSGformer: A novel multivariate net load forecasting model for the smart grid (2024 · Journal of Computational Science · 被引 16)
- Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping (2023 · Journal of Crystal Growth · 被引 12)
- A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics (2022 · Journal of Semiconductors · 被引 12)
- Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate (2022 · Journal of Crystal Growth · 被引 12)