C. Guedj

机构：Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes · ORCID：0009-0004-9506-9875

发表论文 115 篇 · 总被引 1033 次 · h-index 19

代表论文

• First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers (2016 · 被引 75)
• Dual-channel CMOS co-integration with Si NFET and strained-SiGe PFET in nanowire device architecture featuring sub-15nm gate length (2014 · 被引 30)
• (Invited) SOI-Type Bonded Structures for Advanced Technology Nodes (2014 · ECS Transactions · 被引 28)
• Quantitative determination of elemental diffusion from deeply buried layers by photoelectron spectroscopy (2018 · Journal of Applied Physics · 被引 24)
• Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 (2016 · Solid-State Electronics · 被引 24)
• Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory (2014 · Applied Physics Letters · 被引 21)