David Wei Zhang

机构：Fudan University, Institute of Microelectronics, Shanghai Fudan Microelectronics (China)

发表论文 6 篇 · 总被引 17 次 · h-index 3

代表论文

• Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching (2018 · The Journal of Physical Chemistry C · 被引 10)
• La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2P r ~43.4 μ C/cm 2 ) at 1.5 MV/Cm With 10 10 Cycles Endurance (2025 · IEEE Electron Device Letters · 被引 3)
• High-Density Solenoid Inductor With Magnetic Film for Enhanced Performance in Silicon Interposer (2025 · IEEE Transactions on Components Packaging and Manufacturing Technology · 被引 3)
• Back-End of Line Compatible HZO/ZrO 2 Ferroelectric Capacitor Achieving 2P r of 51.1 μC/cm 2 , High- k (~48.4), and Endurance Exceeding 10 11 Cycles Under Low-Voltage Operation (2025 · IEEE Electron Device Letters · 被引 1)
• Universal Time-Dependent DIBL Model for HCD-Degraded FinFETs (2025 · IEEE Transactions on Electron Devices)
• Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching C (2018 · The Journal of Physical Chemistry)