Zhicheng Dai

机构：Wuhan University of Technology · ORCID：0009-0004-2157-0296

发表论文 35 篇 · 总被引 944 次 · h-index 15

代表论文

• Hydrogen-Bonded Dopant-Free Hole Transport Material Enables Efficient and Stable Inverted Perovskite Solar Cells (2021 · CCS Chemistry · 被引 64)
• First-Principles Predictions of Janus MoSSe and WSSe for FET Applications (2020 · The Journal of Physical Chemistry C · 被引 56)
• Ternary VOCl single-crystal as efficient gate dielectric for 2D field-effect transistors (2020 · 2D Materials · 被引 49)
• Sulfonated Dopant‐Free Hole‐Transport Material Promotes Interfacial Charge Transfer Dynamics for Highly Stable Perovskite Solar Cells (2021 · Advanced Sustainable Systems · 被引 42)
• Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer (2019 · Electronics · 被引 24)
• Benzo/Naphthodifuranone‐Based Polymers: Effect of Perpendicular‐Extended Main Chain π‐Conjugation on Organic Field‐Effect Transistor Performances (2021 · Macromolecular Rapid Communications · 被引 21)