Tongjun Yu

机构：King University, Peking University, Research Institute of Semiconductor Devices · ORCID：0000-0001-8595-7351

发表论文 189 篇 · 总被引 2340 次 · h-index 26

代表论文

Realizing overgrowth in the homo-PVT process for 2 inch AlN single crystals (2022 · CrystEngComm · 被引 12)
Surface Control of AlN Single Crystal Growth on SiC Substrate (2024 · Crystal Growth & Design · 被引 7)
Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport (2024 · Semiconductor Science and Technology · 被引 7)
The dependence of light extraction improvement on optimized surface microstructure for AlGaN-based UVC-LEDs considering TM-polarized emission (2023 · Micro and Nanostructures · 被引 7)
Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric Jogs (2025 · Physical Review Letters · 被引 6)
Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission (2022 · Journal of Applied Physics · 被引 5)