David Wei Zhang

机构：Fudan University, Shanghai Fudan Microelectronics (China)

发表论文 7 篇 · 总被引 110 次 · h-index 3

代表论文

• Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO x (2017 · IEEE Journal of the Electron Devices Society · 被引 58)
• Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing (2024 · Nano Letters · 被引 26)
• Organic Synaptic Transistors Based on C8-BTBT/PMMA/PbS QDs for UV to NIR Face Recognition Systems (2025 · Nano Letters · 被引 24)
• Plasma enhanced atomic layer deposition of molybdenum oxide from Mo(CO)6 and O2 plasma for 2D electronic device application (2016 · 被引 1)
• Ion implant technology for state-of-the-art high efficiency solar cell applications (2016 · 被引 1)
• A Highly Integrated 1T CMOS Image Sensor with Enhanced Dynamic Range Performance (2025)