Seiichi Hayakawa

机构：Hiroshima University

发表论文 20 篇 · 总被引 178 次 · h-index 8

代表论文

Simplified Model Analysis of Self-Excited Oscillation and Its Suppression in a High-Voltage Common Package for Si-IGBT and SiC-MOS (2018 · IEEE Transactions on Electron Devices · 被引 37)
Reliability Improvement of 3.3 kV Full-SiC Power Modules for Power Cycling Tests With Sintered Copper Die Attach Technology (2023 · IEEE Transactions on Components Packaging and Manufacturing Technology · 被引 28)
Improvement of power cycling reliability of 3.3kV full-SiC power modules with sintered copper technology for Tj, max=175°C (2018 · 被引 28)
3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching (2017 · 被引 20)
Diode-Less SiC Power Module With Countermeasures Against Bipolar Degradation to Achieve Ultrahigh Power Density (2020 · IEEE Transactions on Electron Devices · 被引 16)
Suppression of self-excited oscillation for common package of Si-IGBT and SiC-MOS (2017 · 被引 14)