Fangliang Gao

机构：South China Normal University · ORCID：0000-0002-3642-9453

发表论文 116 篇 · 总被引 1869 次 · h-index 25

代表论文

• Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions (2024 · IEEE Transactions on Electron Devices · 被引 53)
• Recent advances in III–V nitrides: properties, applications and perspectives (2024 · Journal of Materials Chemistry C · 被引 52)
• Recent Advances in the Preparation of Gallium‐based 2D Materials and Devices Based on Gallium Liquid Metal (2025 · Advanced Functional Materials · 被引 25)
• Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates (2024 · Journal of Materials Chemistry C · 被引 20)
• Graphene/GaN ultraviolet photodetector performance regulated by a HfO2 insulating layer (2024 · Applied Physics Letters · 被引 19)
• Formic acid-engineered PEDOT:PSS for enhanced crystallinity and performance in tin–lead perovskite solar cells (2025 · Applied Physics Letters · 被引 10)