Yaotian Ling

机构：Peking University, Fraunhofer Institute for Integrated Circuits · ORCID：0000-0001-6339-3081

发表论文 24 篇 · 总被引 440 次 · h-index 14

代表论文

• Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application (2020 · IEEE Electron Device Letters · 被引 47)
• Modulation of nonlinear resistive switching behavior of a TaO x -based resistive device through interface engineering (2016 · Nanotechnology · 被引 40)
• Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk (2020 · 被引 34)
• Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform (2020 · Advanced Electronic Materials · 被引 32)
• Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States (2020 · IEEE Transactions on Electron Devices · 被引 32)
• A Logic-Process Compatible RRAM with 15.43 Mb/mm 2 Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall (2023 · 被引 31)