Shogo Itai

机构：KIOXIA Corporation (Japan)

发表论文 10 篇 · 总被引 149 次 · h-index 4

代表论文

• 7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture (2015 · 被引 101)
• Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques (2014 · 被引 28)
• 14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAM (2023 · 被引 10)
• Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications (2015 · Microelectronics Reliability · 被引 6)
• Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM (2024 · 被引 4)
• Advanced Microscopic Model of MgO Barrier Breakdown with Impurity-Induced Oxygen Vacancies Toward High-Density STT-MRAM (2026)