Takashi Taniguch

机构：National Institute for Materials Science

发表论文 6 篇 · 总被引 479 次 · h-index 4

代表论文

Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride (2014 · ACS Nano · 被引 302)
Fermi‐Level Pinning‐Free WSe 2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits (2022 · Advanced Materials · 被引 141)
Robust Nuclear Spin Polarization via Ground-State Level Anticrossing of Boron Vacancy Defects in Hexagonal Boron Nitride (2024 · Physical Review Letters · 被引 17)
An Asymmetry Field‐Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs (2021 · Advanced Materials · 被引 12)
Robust Nuclear Spin Polarization via Ground-State Level Anti-Crossing of Boron Vacancy Defects in Hexagonal Boron Nitride (2023 · arXiv (Cornell University) · 被引 2)
Electron Transport Properties of a Pseudo III-V Nitride ZnSnN 2 Epilayers (2018 · The Japan Society of Applied Physics)