Erik Rosseel

机构：IMEC · ORCID：0000-0002-2737-8391

发表论文 266 篇 · 总被引 3447 次 · h-index 31

代表论文

• Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures (2022 · 2022 International Electron Devices Meeting (IEDM) · 被引 34)
• Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails (2022 · IEEE Transactions on Electron Devices · 被引 24)
• Toward high-performance and reliable Ge channel devices for 2 nm node and beyond (2020 · 被引 23)
• Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts (2024 · 被引 22)
• Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections (2022 · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 被引 20)
• Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space (2021 · Symposium on VLSI Technology · 被引 20)