Gangping Yan

机构：Beijing Academy of Science and Technology · ORCID：0000-0002-5364-3224

发表论文 46 篇 · 总被引 447 次 · h-index 12

代表论文

• First Demonstration of True 4-bit Memory with Record High Multibit Retention >10 3 s and Read Window >10 5 by Hydrogen Self-Adaptive-Doping for IGZO DRAM Arrays (2023 · 被引 31)
• Multi-channel detection of dopamine and glucose utilizing graphene field effect transistor electrochemical sensor and efficient data fusion algorithm (2023 · Journal of Electroanalytical Chemistry · 被引 15)
• Linear Tuning of Positive Threshold Voltage in IGZO Thin-Film Transistors via Gate Dielectric Stack Engineering (2025 · IEEE Electron Device Letters · 被引 10)
• Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM (2024 · IEEE Electron Device Letters · 被引 9)
• Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window (2023 · IEEE Transactions on Electron Devices · 被引 9)
• Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory (2023 · ACS Applied Electronic Materials · 被引 7)