Hongyang Fan

机构：Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microelectronics · ORCID：0009-0001-3107-4358

发表论文 7 篇 · 总被引 145 次 · h-index 5

代表论文

• Realizing Li 7 La 3 Zr 2 O 12 garnets with high Li + conductivity and dense microstructures by Ga/Nb dual substitution for lithium solid-state battery applications (2020 · Sustainable Energy & Fuels · 被引 60)
• Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂ (2024 · IEEE Electron Device Letters · 被引 44)
• Molecular reconfigurations enabling active liquid–solid interfaces for ultrafast Li diffusion kinetics in the 3D framework of a garnet solid-state electrolyte (2021 · Journal of Materials Chemistry A · 被引 16)
• Interfacial engineering facilitating robust Li 6.35 Ga 0.15 La 3 Zr 1.8 Nb 0.2 O 12 for all-solid-state lithium batteries (2021 · Sustainable Energy & Fuels · 被引 12)
• Dendrite-free lithium deposition via a fumed silica interlayer as an electron inhibitor in all-solid-state batteries (2022 · Chemical Communications · 被引 8)
• Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET (2025 · IEEE Transactions on Electron Devices · 被引 3)