Xinnan Huang

机构：Jiujiang University, Institute of Modern Physics, University of Chinese Academy of Sciences · ORCID：0000-0003-1900-5357

发表论文 30 篇 · 总被引 303 次 · h-index 11

代表论文

• Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors (2019 · Advanced Electronic Materials · 被引 45)
• Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering (2020 · Advanced Electronic Materials · 被引 29)
• Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors (2020 · Materials · 被引 29)
• How Do Contact and Channel Contribute to the Dirac Points in Graphene Field‐Effect Transistors? (2018 · Advanced Electronic Materials · 被引 25)
• A gas-filled recoil separator, SHANS2, at the China Accelerator Facility for Superheavy Elements (2023 · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 被引 24)
• Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping (2019 · Advanced Electronic Materials · 被引 20)