Baoxing Zhai

机构：Henan Academy of Sciences, Institute of Semiconductors · ORCID：0000-0002-1799-6399

发表论文 45 篇 · 总被引 1143 次 · h-index 16

代表论文

• Intrinsic Defect‐Driven Synergistic Synaptic Heterostructures for Gate‐Free Neuromorphic Phototransistors (2024 · Advanced Materials · 被引 76)
• 2D Ferroic Materials for Nonvolatile Memory Applications (2023 · Advanced Materials · 被引 64)
• Ag-doped non–imperfection-enabled uniform memristive neuromorphic device based on van der Waals indium phosphorus sulfide (2024 · Science Advances · 被引 29)
• van der Waals Epitaxial Growth of One-Unit-Cell-Thick Ferroelectric CuCrS 2 Nanosheets (2024 · Nano Letters · 被引 25)
• Phase Engineering of 2D Spinel‐Type Manganese Oxides (2023 · Advanced Materials · 被引 23)
• Ultrathin Rare‐Earth Oxyhalides as High‐ κ van der Waals Layered Dielectrics (2025 · Advanced Materials · 被引 16)