Hongming Mou

机构：Peng Cheng Laboratory · ORCID：0009-0008-2440-7995

发表论文 12 篇 · 总被引 36 次 · h-index 3

代表论文

• Speed enhancement of magnetic logic-memory device by insulator-to-metal transition (2020 · Applied Physics Letters · 被引 8)
• Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications (2019 · AIP Advances · 被引 8)
• Single pulse blind-write with gradient accumulation strategy tolerant to non-idealities of memristive synapse for in-memory learning (2025 · Journal of Physics D Applied Physics · 被引 3)
• Nonvolatile magnetic half adder combined with memory writing (2021 · Applied Physics Letters · 被引 3)
• Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect (2024 · International Journal of Minerals Metallurgy and Materials · 被引 2)
• A magnetic-field-driven neuristor for spiking neural networks (2023 · Applied Physics Letters · 被引 2)