Fuwen Qin

机构：Dalian University of Technology, Dalian University, Ministry of Education · ORCID：0009-0008-0451-6641

发表论文 79 篇 · 总被引 882 次 · h-index 18

代表论文

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM (2021 · Applied Surface Science · 被引 42)
Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states (2022 · Applied Surface Science · 被引 31)
The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface (2022 · Applied Surface Science · 被引 29)
Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors (2020 · Applied Surface Science · 被引 27)
Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces (2023 · ACS Applied Materials & Interfaces · 被引 21)
Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors (2020 · Applied Surface Science · 被引 21)