Nathaniel S. Safron

机构：Taiwan Semiconductor Manufacturing Company (United States)

发表论文 39 篇 · 总被引 1701 次 · h-index 16

代表论文

• Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs (2016 · Science Advances · 被引 353)
• Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping (2023 · Nature Electronics · 被引 40)
• High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at V DS of 0.75 V by self-aligned doping in sub-20 nm spacer (2023 · 被引 18)
• Orientation Control of Selected Organic Semiconductor Crystals Achieved by Monolayer Graphene Templates (2016 · Advanced Materials Interfaces · 被引 18)
• Building high performance transistors on carbon nanotube channel (2023 · 被引 16)
• Enhancement-Mode Atomic Layer Deposited W-Doped In 2 O 3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability (2024 · 被引 11)