Pengying Chang

机构：Beijing University of Technology · ORCID：0000-0002-0390-2638

发表论文 52 篇 · 总被引 373 次 · h-index 12

代表论文

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications (2023 · Journal of Semiconductors · 被引 48)
Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor (2020 · IEEE Electron Device Letters · 被引 35)
Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering (2021 · IEEE Transactions on Electron Devices · 被引 24)
Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication (2022 · ACS Applied Materials & Interfaces · 被引 20)
Evaluation of HfO-Based Ferroelectric Resonant Tunnel Junction by Band Engineering (2022 · IEEE Electron Device Letters · 被引 19)
Transparent and Conformal Directional Janus Metasurface with Joint Amplitude and Phase Modulations (2025 · Laser & Photonics Review · 被引 15)