Hong-Ping Ma

机构：Ningbo University, Fudan University, Robotics Research (United States) · ORCID：0000-0003-4175-5437

发表论文 112 篇 · 总被引 1918 次 · h-index 22

代表论文

• Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC (2025 · Nature Communications · 被引 15)
• High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures (2025 · Nanomaterials · 被引 15)
• Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga 2 O 3 /AlN Schottky Barrier Diode Grown via MOCVD (2025 · ACS Applied Materials & Interfaces · 被引 13)
• Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors (2025 · Materials · 被引 10)
• Investigation of the Degradation Mechanism of β -Ga 2 O 3 SBD on 5 MeV Proton Irradiation (2025 · IEEE Transactions on Electron Devices · 被引 8)
• Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen–Oxygen Ratios (2025 · Nanomaterials · 被引 7)