Yanzhao Wei

机构：Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microelectronics · ORCID：0000-0003-0372-2423

发表论文 11 篇 · 总被引 73 次 · h-index 5

代表论文

• Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALD (2022 · IEEE Transactions on Electron Devices · 被引 20)
• Sub-5-Å La 2 O 3 In Situ Dipole Technique for Large V FB Modulation With EOT Reduction and Improved Interface for HKMG Technology (2023 · IEEE Transactions on Electron Devices · 被引 19)
• Low‐temperature atomic‐level trimming on Ge interfused surface for gate‐all‐around Si nanosheets transistors (2024 · Rare Metals · 被引 12)
• Linear Fine-Tuning VFB and Improved Interface via Novel Al₂O₃ Atomic in-situ Dipole Buffer Layer (DBL) in ALD La₂O₃ Dipole-First Stack (2025 · IEEE Electron Device Letters · 被引 7)
• Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs (2024 · IEEE Journal of the Electron Devices Society · 被引 5)
• Investigation of TiN/LaO x Interface Dipole Effect on Negative Flat-Band Voltage ( V FB ) Shift in TiN/LaO x /HfO 2 /SiO 2 Gate Stacks Using Dipole-Last Technology (2025 · IEEE Transactions on Electron Devices · 被引 4)